| ‘? _ BYG21 K-E3/H E3, BYG21 M-E3/H E37 Www'V'Shay'C°m Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 0C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneousforward voltage J: ] Maximum reverse IF : 0.5 A, IR :1.0 A, recovery time I" : 0.25 A Note(l) Pulse test: 300 us pulse Width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 00 unless otherwise noted) PARAMETER Typical thermal resistance, junction to lead, TL : const. Typical thermal resistance, junction to ambient Notesl‘) Mounted on epoxy-glass hard tissue(2) Mounted on epoxy-glass hard tissue, 50 mm? 35 um Cu(3) Mounted on AI-oxide-ceramic (AI2O3), 50 mm2 35 um Cu UNIT WEIGHT (9) PREFERRED PACKAGE coDE BYG21KHE3/TR3 (1) Note1‘) AEC—Q1 01 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 0C unless otherwise noted) 10 VR : VRRM A Hall Slnewave$ 3 ‘ E E 3x- to 8 0 I ti E EmLE r? E ': o 01 5><( 0.001 O 0 5 1.0 1.5 2.0 2.5 3.0 3.5 O 25 50 75 I00 I25 I50 Forward Voltage (V) Ambient Temperature (°C)Fig. 1 — Forward Current vs. Forward Voltage Fig. 2 — Max. Average Forward Current vs. Ambient Temperature Revision: 21 -Aug-1 3 2 Document Number: 88961 For technical questions within your region: DiodesArnericas@vishay.corn, DiodesAsia@vishay.com, DiodesEurope@Vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.comzooc?91000 |